amplifier transistors npn silicon maximum ratings rating symbol bc237 bc238 bc239 unit collectoremitter voltage v ceo 45 25 25 vdc collectoremitter voltage v ces 50 30 30 vdc emitterbase voltage v ebo 6.0 5.0 5.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 357 c/w thermal resistance, junction to case r jc 125 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage bc237 (i c = 2.0 ma, i b = 0) bc238 bc239 v (br)ceo 45 25 25 e e e e e e v emitterbase breakdown voltage bc237 (i e = 100 a, i c = 0) bc238 bc239 v (br)ebo 6.0 5.0 5.0 e e e e e e v collector cutoff current (v ce = 30 v, v be = 0) bc238 bc239 (v ce = 50 v, v be = 0) bc237 (v ce = 30 v, v be = 0) t a = 125 c bc238 bc239 (v ce = 50 v, v be = 0) t a = 125 c bc237 i ces e e e e e e 0.2 0.2 0.2 0.2 0.2 0.2 15 15 15 4.0 4.0 4.0 na m a on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 3 1 publication order number: bc237/d bc237,a,b,c bc238b,c BC239C case 2911, style 17 to92 (to226aa) 1 2 3 collector 1 2 base 3 emitter
bc237,a,b,c bc238b,c BC239C http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 10 m a, v ce = 5.0 v) bc237a bc237b/238b bc237c/238c/239c (i c = 2.0 ma, v ce = 5.0 v) bc237 bc237a bc237b/238b bc237c/238c/239c (i c = 100 ma, v ce = 5.0 v) bc237a bc237b/238b bc237c/238c/239c h fe e e e 120 120 200 380 e e e 90 150 270 e 170 290 500 120 180 300 e e e 800 220 460 800 e e e e collectoremitter on voltage (i c = 10 ma, i b = 0.5 ma) bc237/bc238/bc239 (i c = 100 ma, i b = 5.0 ma) bc237/bc239 bc238 v ce(sat) e e 0.07 0.2 0.2 0.6 0.8 v baseemitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.6 e 0.83 1.05 v baseemitter on voltage (i c = 100 m a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) (i c = 100 ma, v ce = 5.0 v) v be(on) e 0.55 e 0.5 0.62 0.83 e 0.7 e v dynamic characteristics currentgain e bandwidth product (i c = 0.5 ma, v ce = 3.0 v, f = 100 mhz) bc237 bc238 bc239 (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) bc237 bc238 bc239 f t e e e 150 150 150 100 120 140 200 240 280 e e e e e e mhz collectorbase capacitance (v cb = 10 v, i c = 0, f = 1.0 mhz) c obo e e 4.5 pf emitterbase capacitance (v eb = 0.5 v, i c = 0, f = 1.0 mhz) c ibo e 8.0 e pf noise figure (i c = 0.2 ma, v ce = 5.0 v, r s = 2.0 k w , f = 1.0 khz) bc239 (i c = 0.2 ma, v ce = 5.0 v, r s = 2.0 k w , f = 1.0 khz, d f = 200 hz) bc237 bc238 bc239 nf e e e e 2.0 2.0 2.0 2.0 4.0 10 10 4.0 db figure 1.
bc237,a,b,c bc238b,c BC239C http://onsemi.com 3 2.0 1.5 1.0 0.2 0.3 0.4 0.6 0.8 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 i c , collector current (madc) figure 1. normalized dc current gain h fe , normalized dc current gain v ce = 10 v t a = 25 c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 i c , collector current (madc) figure 2. asaturationo and aono voltages v, voltage (volts) t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 400 20 30 40 60 80 100 200 300 0.5 1.0 0.7 2.0 3.0 5.0 7.0 10 20 30 50 i c , collector current (madc) figure 3. currentgain e bandwidth product f t , current-gain bandwidth product (mhz) c, capacitance (pf) 10 1.0 2.0 3.0 5.0 7.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 v r , reverse voltage (volts) figure 4. capacitances v ce = 10 v t a = 25 c t a = 25 c c ib c ob r b , base spreading resistance (ohms) 170 160 150 140 130 120 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 i c , collector current (madc) figure 5. base spreading resistance v ce = 10 v f = 1.0 khz t a = 25 c
bc237,a,b,c bc238b,c BC239C http://onsemi.com 4 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 17: pin 1. collector 2. base 3. emitter on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc237/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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